Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: Reliability- and variability-aware design-technology co-optimization (RV-aware DTCO) becomes indispensable with advanced nodes. However, four key issues hinder its practical adoption: the ...
Today, Science, Technology, and Innovation are increasingly important in all spheres of human life. As science and technology rapidly advance, some developing nations are seizing the opportunity to ...
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